| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing breakdown due to a surge current at a low production cost and changing the characteristics as required. SOLUTION: The semiconductor device consists of a first gate voltage driving type semiconductor element 20, a first gate pattern 26 connected to the gate of the semiconductor element 20, a second gate voltage driving type semiconductor element 41 and a second gate pattern 33 connected to the gate of the semiconductor element 41. COPYRIGHT: (C)2005,JPO&NCIPI
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