SUSCEPTOR AND VAPOR PHASE GROWING APPARATUS

摘要

PROBLEM TO BE SOLVED: To perform vapor growing of a single crystalline thin film on the main surface of a semiconductor substrate while suppressing the generation of a flaw. SOLUTION: A vapor phase growing apparatus 100 for performing vapor growing of the single crystalline thin film on the main surface of the semiconductor substrate W is provided with a plate-like susceptor 2 for horizontally supporting the semiconductor substrate W from downward in a counerbore 2c. The counerbore 2c has an external peripheral side counerbore portion 20 having a substrate supporting surface 20a for supporting the semiconductor substrate W, and a center side counerbore portion 21 formed so as to be more recessed than this portion 20. The portion 20 has the substrate supporting surface 20a tilting with respect to the horizontal plane so as to be lower from the external peripheral side of the counerbore 2c toward the center side, and supports the inner side of the external peripheral side of the surface of the semiconductor substrate W in a region except at least an internal peripheral edge 20b of the surface 20a. A portion 21 of the counerbore 2c is recessed to a depth not contacting the rear surface of the semiconductor substrate W. COPYRIGHT: (C)2005,JPO&NCIPI