| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting type semiconductor laser which has excellent light emitting efficiency and which can rapidly drive as well as which can be reduced in size the laser, and to provide a method for manufacturing the same. SOLUTION: The surface emitting type semiconductor laser 100 comprises a light emitting region 210 and a non-light emitting region 220 to emit a light from the region 210 in a direction perpendicular to a semiconductor substrate 101. The region 210 has a resonator 120 formed on the substrate 101. The non- light emitting region 220 has a contact region 111 electrically connected to the resonator 120. The region 111 is formed on a layer continued to a layer for constituting at least a part of the resonator 120, and has higher carrier concentration than that of the continued layer.
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