| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a plastically sealed semiconductor device that prevents insulating film's peeling or the like, which occurs due to a compressive direction's internal stress that a plated wiring of a plastically sealed semiconductor substrate has. SOLUTION: The manufacturing method for the semiconductor device comprises the steps of forming an insulating film on a semiconductor substrate having at least a metal wiring, the insulating film that does not let in moisture, forming a first opening at a predetermined position on the metal wiring part of the insulating film as well as forming a gap in the neighborhood of the metal wiring of the insulating film adjacent to the semiconductor substrate, forming a photosensitive resinous film such that it covers the insulating film and the first opening and forming a second opening on the photosensitive resinous film such that it includes the first opening, forming a plated layer such that it fills at least the second opening, removing the photosensitive resinous film, and plastically sealing the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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