| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having a high withstand voltage, a low on-resistance, and hard to deteriorate an element characteristic. SOLUTION: The semiconductor device comprises an n-type substrate 1, an n-type drift layer 2 formed on the n-type substrate 1, first and second n-type semiconductor layers 3, 4, a plurality of p-type base regions 5 separated from one another at predetermined intervals, an n-type source region 6 formed in each base region 5, a source electrode 10 provided on the surface of a part of each source region 6, and a gate electrode 8 provided on the surface of a part of each source region 6 and on the surface of the second semiconductor layer 4 between the source regions 6 through the gate insulating film. The first and the second semiconductor layers 3, 4 are crystal layers formed by epitaxial growth. A relation among the impurity concentration N<SB>1</SB>of the drift layer 2, the impurity concentration N<SB>2</SB>of the first semiconductor layer 3, and the impurity concentration N<SB>3</SB>of the second semiconductor layer 4 is shown by N<SB>3</SB><N<SB>1</SB><N<SB>2</SB>. COPYRIGHT: (C)2005,JPO&NCIPI
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