发明名称 |
Semiconductor device comprising capacitor |
摘要 |
A conductive film forming a capacitor lower electrode has portions extending perpendicularly to the main surface of a semiconductor substrate and a portion extending in parallel with the main surface of the semiconductor substrate. An insulator film forming a capacitor dielectric film is provided along the surface of a recess portion defined by the conductive film. Another conductive film forming a capacitor upper electrode is embedded in a recess portion of the insulator film. The conductive film and a wiring layer are formed on the same layer, so that the wiring layer functions as a dummy pattern of a capacitor having the conductive films. Consequently, a semiconductor device having a capacitor capable of increasing the electrostatic capacitance and reducing the quantity of the material forming the dummy pattern without occupying a large area in the direction parallel to the main surface of the semiconductor substrate is obtained.
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申请公布号 |
US6815747(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20020315029 |
申请日期 |
2002.12.10 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
KOSUGI TAKESHI;OASHI TOSHIYUKI |
分类号 |
H01L21/8242;H01L21/02;H01L21/768;H01L23/48;H01L23/522;H01L27/04;H01L27/10;H01L27/108;H01L29/76;H01L29/94;H01L31/119;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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