发明名称 |
GAS FOR PLASMA PROCESSING |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas for plasma processing capable of enhancing the plasma processing capabilities. <P>SOLUTION: The gas for plasma processing is introduced between electrodes 1, 1 facing each other when generating a plasma 3 under a pressure near the atmospheric pressure by applying voltages between the electrodes 1, 1 facing each other and applying a plasma processing on the surface of an object 4 to be processed by the plasma 3. The concentration of oxygen against nitrogen is 0.01-0.7% in volume ratio. Thereby, oxygen excited species can be made to exist stably in the generated plasma 3. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004311314(A) |
申请公布日期 |
2004.11.04 |
申请号 |
JP20030105832 |
申请日期 |
2003.04.09 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
SAWADA KOJI;TAGUCHI NORIYUKI |
分类号 |
H05H1/24;C23F4/00;H01L21/304;H01L21/3065 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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