发明名称 GAS FOR PLASMA PROCESSING
摘要 <P>PROBLEM TO BE SOLVED: To provide a gas for plasma processing capable of enhancing the plasma processing capabilities. <P>SOLUTION: The gas for plasma processing is introduced between electrodes 1, 1 facing each other when generating a plasma 3 under a pressure near the atmospheric pressure by applying voltages between the electrodes 1, 1 facing each other and applying a plasma processing on the surface of an object 4 to be processed by the plasma 3. The concentration of oxygen against nitrogen is 0.01-0.7% in volume ratio. Thereby, oxygen excited species can be made to exist stably in the generated plasma 3. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004311314(A) 申请公布日期 2004.11.04
申请号 JP20030105832 申请日期 2003.04.09
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 SAWADA KOJI;TAGUCHI NORIYUKI
分类号 H05H1/24;C23F4/00;H01L21/304;H01L21/3065 主分类号 H05H1/24
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