MATERIAL AND METHOD FOR DEPOSITING CONDUCTIVE BARRIER FILM, WIRED FILM DEPOSITING METHOD, AND ULSI

摘要

PROBLEM TO BE SOLVED: To provide a conductive barrier film depositing material in which film deposition is performed even when a condition that the ratio (aperture/depth) of the aperture to the depth of a groove or a hole is 1/5-1/7 is required, and the thickness is≤10 nm, copper diffusion prevention (barrier property) is excellent, the electric resistance is small, and adhesiveness to a copper film is excellent. SOLUTION: The conductive barrier film depositing material is used to deposit a conductive Ti-Zr barrier film by the chemical vapor deposition, and contains Ti halide compound (TiCl4or the like) or metal organic compound with Ti, and Zr halide compound (ZrCl4or the like) or metal organic compound with Zr. COPYRIGHT: (C)2005,JPO&NCIPI