Production of conducting structure in substrate for producing semiconductor component comprises forming trench with side walls and base in the substrate, forming initial layer on the substrate, and further processing

摘要

Production of a conducting structure in a substrate (1) comprises forming a trench (5) with side walls and a base in the substrate, forming an initial layer (2) on the substrate to cover the base and side walls, and forming the conducting structure by filling the trench using electrochemical deposition of a filling material (4) on the conducting initial layer. A dielectric coating (3) is formed on the initial layer and on sections of the side walls before the trench is filled. The dielectric coating is formed by sequential gas phase deposition.