| 摘要 |
<P>PROBLEM TO BE SOLVED: To speedily write data without losing data holding stability. <P>SOLUTION: A substrate potential setting circuit 10, which controls substrate potential at least when data are written, is provided in row units of a memory cell array 1. When data are written, potential is changed in the substrate region of a memory cell transistor in a selected row so that data holding characteristics (statistic noise margin) are deteriorated, thus speedily, certainly writing the data to the memory cell. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
