| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a semiconductor element such as an insulated gate type FET having a trench structure cannot be manufactured with an excellent productivity. SOLUTION: A trench 12 is formed to a semiconductor substrate 4 with a p-type semiconductor region 1, an n-type semiconductor region 2 and an n<SP>+</SP>-type semiconductor region 3. The substrate 4 is irradiated with infrared rays from an infrared lamp 13 connected to a controller 16, the surface region of the substrate 4 is fluidized, the corner 12c of the inlet of the trench 12 and the corner 12d of a bottom are rounded, and a damage and a roughness are removed simultaneously. The intensity of infrared rays and an irradiation time are controlled by the controller 16. A gate insulating film 17 is formed on the side face of the trench 12. A polycrystalline silicon conductor layer as a gate electrode is formed in the trench 12 through the gate insulating film 17. COPYRIGHT: (C)2005,JPO&NCIPI
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