| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for melting a raw material for a silicon single crystal, by which the heat amount that a quartz crucible receives from a heater can be reduced and the conversion of the inner face of the crucible into cristobalite can be suppressed. SOLUTION: When the raw material for the silicon single crystal in the crucible is melted, the raw material for the silicon single crystal is melted under such a condition that a radiation heat shielding member for suppressing heat dissipation into a radiation screen is suspended in the radiation screen. The raw material for the single crystal is melted by using the radiation heat shielding member having a lower side surface area within a range of 50-80% of the area of the opening part at the lower end of the radiation screen. COPYRIGHT: (C)2005,JPO&NCIPI
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