| 发明名称 |
Method of fabricating local interconnection using selective epitaxial growth |
| 摘要 |
In a method of fabricating local interconnection, a selective epitaxial growth seed layer pattern is formed on a region of a semiconductor substrate where a local interconnection is to be formed. A selective epitaxial layer is formed by performing epitaxial growth on the resultant structure. The resistance of the selective epitaxial layer is reduced to complete the local interconnection.
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| 申请公布号 |
US2004209454(A1) |
申请公布日期 |
2004.10.21 |
| 申请号 |
US20040766645 |
申请日期 |
2004.01.28 |
| 申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHOI JIN-HO;OH HAN-SU |
| 分类号 |
H01L21/28;H01L21/20;H01L21/285;H01L21/3205;H01L21/768;H01L21/8234;H01L21/8238;H01L21/8244;H01L23/52;H01L27/088;H01L27/092;H01L27/11;H01L29/417;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
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