发明名称 |
Methods for forming line patterns in semiconductor substrates |
摘要 |
A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
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申请公布号 |
US6803176(B2) |
申请公布日期 |
2004.10.12 |
申请号 |
US20020227067 |
申请日期 |
2002.08.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SANG-JUN;KANG YOOL;MOON JOO-TAE;CHUNG JEONG-HEE;WOO SANG-GYUN |
分类号 |
G03F7/004;C08K5/00;C08K5/06;C08K5/14;C08K5/16;C08K5/23;C08L61/04;G03F7/022;G03F7/039;G03F7/40;H01L21/027;(IPC1-7):G03F7/40 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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