发明名称 |
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions |
摘要 |
A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insulator, and a boundary layer located at the boundary between the bulk device region and the SOI device region. The bulk device region has a first device-fabrication surface in which a bulk device is positioned on the bulk growth layer. The SOI device region has a second device-fabrication surface in which an SOI device is positioned on the silicon layer. The first and second device-fabrication surfaces are positioned at a substantially uniform level.
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申请公布号 |
US2004195626(A1) |
申请公布日期 |
2004.10.07 |
申请号 |
US20040828337 |
申请日期 |
2004.04.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMADA TAKASHI;NAGANO HAJIME;MIZUSHIMA ICHIRO;SATO TSUTOMU;OYAMATSU HISATO;NITTA SHINICHI |
分类号 |
H01L21/762;H01L21/8234;H01L21/8242;H01L21/84;H01L27/08;H01L27/088;H01L27/108;H01L27/12;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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