| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a deep hole for interconnecting stacked semiconductor chips can be etched with high precision, and to provide its manufacturing process. <P>SOLUTION: The semiconductor device comprises a contact pad 12 formed on the same layer as the lowermost wiring layer in a first semiconductor chip 6, a connecting means 13 formed on the contact pad, an electrode take-out pad 7 formed on the connecting means, a metal post 8 formed on the pad to be exposed from the surface of the semiconductor chip 6 and connected with a wiring pattern, a hole 6a formed in the rear surface of the first semiconductor chip 6 at a position facing the metal post beneath the contact pad, an electrode take-out pad 7 formed on a second semiconductor chip 9, a metal post 8 formed on the pad to be exposed from the surface of the semiconductor chip 9 and inserted into the hole in order to be connected with the contact pad, and a resin 11 sealing the semiconductor chips 6 and 9 on the surface of the substrate 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
