发明名称 |
APPARATUS FOR PROCESSING SUBSTRATE USING PLASMA GAS TO IMPROVE UNIFORMITY OF PLASMA GAS |
摘要 |
PURPOSE: An apparatus for processing a substrate using a plasma gas is provided to improve the uniformity of the plasma gas by easily controlling an arrangement angle of nozzles. CONSTITUTION: A dome(204) for applying a plasma gas is connected to a process chamber(202). Induction coils(212) are formed on the dome so as to connect an RF power source(210). A chuck(206) for supporting a substrate(10) is formed in the process chamber. A plurality of nozzles(222) are connected between the process chamber and the dome by ball joint technique for applying a process gas to the dome. The nozzles are arranged at an inner portion of a ring plate(220) to circumference direction.
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申请公布号 |
KR20040084477(A) |
申请公布日期 |
2004.10.06 |
申请号 |
KR20030019594 |
申请日期 |
2003.03.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, TAE HUN |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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