发明名称 APPARATUS FOR PROCESSING SUBSTRATE USING PLASMA GAS TO IMPROVE UNIFORMITY OF PLASMA GAS
摘要 PURPOSE: An apparatus for processing a substrate using a plasma gas is provided to improve the uniformity of the plasma gas by easily controlling an arrangement angle of nozzles. CONSTITUTION: A dome(204) for applying a plasma gas is connected to a process chamber(202). Induction coils(212) are formed on the dome so as to connect an RF power source(210). A chuck(206) for supporting a substrate(10) is formed in the process chamber. A plurality of nozzles(222) are connected between the process chamber and the dome by ball joint technique for applying a process gas to the dome. The nozzles are arranged at an inner portion of a ring plate(220) to circumference direction.
申请公布号 KR20040084477(A) 申请公布日期 2004.10.06
申请号 KR20030019594 申请日期 2003.03.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, TAE HUN
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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