| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide thin film manufacturing method by a CVD method for solving loss of oxygen in a crystal and degradation of crystallinity due to excess oxygen during crystal growth. SOLUTION: When an oxide thin film is manufactured on a heating substrate by using raw material gas for oxide thin film, oxidation gas and dilution gas, combustible gas with high combustibility is supplied on the substrate with raw material gas, oxidation gas and dilution gas so as to make them react. When raw material gas dissolves with a raw material as a solvent, they are similarly made to react by using the solvent having an ignition point of 180°C to 315°C as the solvent. COPYRIGHT: (C)2004,JPO&NCIPI
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