| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-quality poly-Si film at a low process temperature. SOLUTION: A method for manufacturing a thin-film transistor at least includes a process for irradiating a semiconductor layer (103) on a substrate (101) with light (104) for crystallizing the semiconductor layer (103); and a process for performing a composite treatment of oxygen plasma treatment (107), hydrogen plasma treatment (108), and high-pressure vapor heat treatment (109) to the crystallized semiconductor layer (103). At least oxygen plasma treatment and hydrogen one are made preferably prior to the high-pressure vapor heat treatment in the composite treatment. COPYRIGHT: (C)2004,JPO&NCIPI |
