发明名称 |
Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolation |
摘要 |
A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.
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申请公布号 |
US2004188730(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20030401945 |
申请日期 |
2003.03.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN WEN-CHIN;TANG DENNY DUAN-LEE;WANG CHAO-HSIUNG |
分类号 |
G11C11/15;H01L43/08;H01L43/12;(IPC1-7):H01L29/94 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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