METHOD FOR THE PRODUCTION OF A MEMORY CELL, MEMORY CELL AND MEMORY CELL ARRANGEMENT

摘要

The invention relates to a method for the production of a memory cell, a memory cell and a memory cell arrangement. According to the inventive method for the production of a memory cell, a first electrically conductive area (311) is formed in and/or on a substrate (301). A second electrically conductive area (312) is also formed at a given distance from the first electrically conductive area such that a cavity (321) is formed between the first and second electrically conductive areas. The first and second electrically conductive areas are configured in such a way that when a first voltage is applied to the electrically conductive areas, a structure is formed from material from at least one of said electrically conductive areas, at least partially bridging over the distance between the electrically conductive areas. When a second voltage is applied to the conductive areas, the material of the structure at least partially bridging over the distance between the electrically conductive areas recedes.