MASK AND METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a mask which can corrects reduction in the resist dimension due to the damage by irradiation with an electron beam or the like in the dimension measurement of a resist pattern formed on a semiconductor substrate by use of an electron beam or the like, and to provide a method for forming a pattern by using the mask.

SOLUTION: The mask 20 has a pattern having the dimension preliminarily corrected corresponding to the reduction in the resist dimension due to damages by irradiation with an electron beam or the like. A resist pattern 24 is formed on a semiconductor substrate 23 by using the mask 20.

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