发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 IN ORDER TO PROVIDE A SEMICONDUCTOR IC UNIT(100) SUCH AS A MICROPROCESSOR, ETC., WHICH SATISFIES BOTH FAST OPERATION AND LOWER POWER CONSUMPTION PROPERTIES WITH ITS HIGH QUALITY KEPT, THE SEMICONDUCTOR IC UNIT OF THE PRESENT INVENTION IS COMPOSED SO AS TO INCLUDE A MAIN CIRCUIT (LOG) PROVIDED WITH TRANSISTORS, WHICH IS FORMED ON A SEMICONDUCTOR SUBSTRATE, AND A SUBSTRATE BIAS CONTROLLING CIRCUIT (VBC) USED FOR CONTROLLING A VOLTAGE TO BE APPLIED TO THE SUBSTRATE, AND THE MAIN CIRCUIT INCLUDES SWITCHING TRANSISTORS (MN 1 AND MP 1) USED FOR CONTROLLING A VOLTAGE TO BE APPLIED TO THE SUBSTRATE AND CONTROL SIGNALS OUTPUT FROM THE SUBSTRATE BIAS CONTROLLING CIRCUIT IS ENTERED TO THE GATE OF EACH THE SWITCHING TRANSISTORS AND THE CONTROL SIGNAL IS RETURNED TO THE SUBSTRATE BIAS CONTROLLING CIRCUIT. (FIG. 2)
申请公布号 MY118314(A) 申请公布日期 2004.09.30
申请号 MY1998PI05761 申请日期 1998.12.19
申请人 HITACHI, LTD. 发明人 HIROYUKI MIZUNO;KOICHIRO ISHIBASHI;TAKANORI SHIMURA;TOSHIHIRO HATTORI
分类号 G11C11/413;H03K3/01;G11C5/14;G11C11/408;H01L21/822;H01L23/58;H01L27/02;H01L27/04;H01L27/092 主分类号 G11C11/413
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