| 发明名称 |
Semiconductor device for motor vehicle, has surge protection circuit including diode whose pn-junction is arranged at a predetermined distant from field oxide film formed on substrate |
| 摘要 |
<p>A surge protection circuit (51) has a diode whose pn junction where zener breakdown occurs, is formed within quadrangular prism and is arranged at a predetermined distant from a field oxide film (7) formed on a main surface of a semiconductor substrate (41).</p> |
| 申请公布号 |
DE10351976(A1) |
申请公布日期 |
2004.09.30 |
| 申请号 |
DE2003151976 |
申请日期 |
2003.11.07 |
| 申请人 |
RENESAS TECHNOLOGY CORP., TOKIO/TOKYO |
发明人 |
YAMAMOTO, FUMITOSHI |
| 分类号 |
H01L27/04;H01L29/73;(IPC1-7):H01L23/62;H01L27/06 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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