发明名称 |
Trench MOS device and process for radhard device |
摘要 |
A MOSgated device is resistant to both high radiation and SEE environments. The active area of the device is formed of trench devices having a thin gate dielectric on the trench walls and a thicker dielectric on the trench bottoms over the device depletion region. Termination rings formed of ring-shaped trenches containing floating polysilicon plugs surrounds and terminates the device active area.
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申请公布号 |
US6798016(B2) |
申请公布日期 |
2004.09.28 |
申请号 |
US20010844958 |
申请日期 |
2001.04.27 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BODEN, JR. MILTON J. |
分类号 |
H01L29/04;H01L29/06;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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