| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a radiation detector changes its characteristics due to a leakage in a TFT element when a sensor discrete electrode arranged on a TFT changes its potential. SOLUTION: The TFT element has a top gate structure in which a gate electrode layer 17 is arranged on a channel region, a TFT channel is protected by the gate electrode, and the TFT element is never turned ON by a back gate effect even if a potential varies corresponding to the output of the sensor discrete electrode so that the TFT element can be set stable in characteristics. The TFT elements are connected in series, whereby the radiation detector is improved in OFF-state characteristics and capable of having redundancies to failures, such as a short circuit occurring between an upper and a lower member through the intermediary of an gate insulating layer or a short circuit in a semiconductor layer. COPYRIGHT: (C)2004,JPO&NCIPI
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