发明名称 ELECTRON SOURCE
摘要 <P>PROBLEM TO BE SOLVED: To solve the problem that a Bao/W Schottky electron source requires high temperature thermal treatments at &ge;1,500&deg;K once per several hours and that the the electron source can not be operated continuously. <P>SOLUTION: This electron source is the Bao/W Schottky electron source using a compound oxide containing barium such as BaAl<SB>3</SB>O<SB>4</SB>as a supply source of barium. The electron source does not require the thermal treatment at &ge;1,500&deg;K once per several hours unlike a conventional technique, but operates at 900-1,450&deg;K in which a low energy width operation can be performed. Since a total emission current is suppressed &le;350 &mu;A in an operational condition of an angle current density of 4.0 mA/sr, deterioration of an electron emission property caused by gas discharge from a draw-out electrode and a metal-made diaphragm or deterioration of reliability such as a damage of a top of a needle due to arc at high angle current density operation, which are problems in the past, can be suppressed. Furthermore, throughput of electron beam applied equipment such as an electron beam exposing machine and a DR-SEM can be improved. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004265614(A) 申请公布日期 2004.09.24
申请号 JP20030025718 申请日期 2003.02.03
申请人 DENKI KAGAKU KOGYO KK 发明人 TERUI YOSHINORI;NONOGAKI RYOZO
分类号 G02B5/00;G02B5/20;G02F1/1335;H01J1/14;H01J1/15;H01J1/304;H01J37/06;H01J37/073 主分类号 G02B5/00
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