| 摘要 |
PROBLEM TO BE SOLVED: To prevent a gate electrode from being damaged due to plasma irradiation. SOLUTION: Gate electrodes 7a, 7b are formed on a silicon substrate 100 via gate oxide films 6a, 6b to form an interlayer insulating film 8 on a silicon substrate 100 including the gate electrodes 7a, 7b, and to form gate wires 10a, 10b electrically connected to the gate electrodes 7a, 7b and metallic films 9a, 9b electrically isolated from the gate wires on the inter-layer insulating film 8. Thus, it is prevented that the gate electrodes 7a, 7b are damaged by plasma emission by placing the metallic films 9a, 9b on the gate electrodes 7a, 7b in a way of covering them even in the case of performing a metallic wire forming process attended with plasma emission, a passivation film forming process, and an etching process. COPYRIGHT: (C)2004,JPO&NCIPI |
