发明名称 TFT AND FLAT DISPLAY ELEMENT PREVENTING HILLOCK DURING THERMAL PROCESS
摘要 PURPOSE: A TFT(Thin Film Transistor) and a flat display element having the same are provided to form a normal channel between a source electrode and a drain electrode although a heat process is performed. CONSTITUTION: At least one of a source electrode, a drain electrode and a gate electrode includes an aluminum alloy lay(131). Titanium layers(132,133) are formed on both surfaces of the aluminum alloy lay. An element selected among silicon, copper, neodymium, platinum and nickel includes about 0.1 mass percents to 5 mass percents in the aluminum alloy lay.
申请公布号 KR20040080531(A) 申请公布日期 2004.09.20
申请号 KR20030015357 申请日期 2003.03.12
申请人 SAMSUNG SDI CO., LTD. 发明人 KIM, TAE SEONG;YOO, GYEONG JIN
分类号 H01L51/50;H01L21/28;H01L27/12;H01L29/423;H01L29/45;H01L29/49;H01L29/786;(IPC1-7):G02F1/136 主分类号 H01L51/50
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