| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to improve reliability of the device by entirely removing residues between gate electrodes. CONSTITUTION: A gate electrode(19) is formed on a semiconductor substrate(11). A spacer(23) is formed at both sidewalls of the gate electrode. An anti-reflective coating layer and a photoresist layer are coated on the resultant structure, wherein the anti-reflective coating layer is composed of a water soluble polymer. The photoresist layer and the anti-reflective coating layer are removed by exposing and developing using DI water and developer. Then, ion-implantation processing is performed.
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