MAGNETIC STORAGE UNIT USING FERROMAGNETIC TUNNEL JUNCTION ELEMENT

摘要

A magnetic storage unit which is prevented from failing by improving the electromigration resistance of the magnetic storage unit that uses a ferromagnetic tunnel junction element. A magnetic storage unit using a ferromagnetic tunnel junction element which laminates a fixed magnetic layer and a free magnetic layer on the upside and downside surfaces of a tunnel barrier layer respectively to form a ferromagnetic tunnel junction element, and runs word lines in the magnetizing direction of the fixed magnetic layer of the ferromagnetic tunnel junction element and bit lines in a direction orthogonal to the magnetizing direction of the fixed magnetic layer of the ferromagnetic tunnel junction element to allow two different storage states to be written into the ferromagnetic tunnel junction element by reversing an electrifying direction to the bit lines, wherein an electrifying direction to word lines is reversed to the same direction as or to the opposite direction to the magnetizing direction of the fixed magnetic layer when writing into the ferromagnetic tunnel junction element.