发明名称 |
METHOD FOR FORMING DIELECTRIC FILM AND DIELECTRIC FILM |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dielectric film in which productivity can be improved largely by lowering a process temperature and treating a wide area in a short time in the formation of the dielectric film, and to provide the dielectric film. SOLUTION: The method for forming the dielectric film contains the formation of a dielectric-film precursor film by using a coating liquid comprising at least one of (A) an organometallic compound, or (B) the hydrolytic condensate of the organometallic compound and the formation of the dielectric film by irradiating the precursor film with light by using a flash lamp 1. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004259869(A) |
申请公布日期 |
2004.09.16 |
申请号 |
JP20030047621 |
申请日期 |
2003.02.25 |
申请人 |
JSR CORP;USHIO INC;OKUTEKKU:KK |
发明人 |
SHINODA TOMOTAKA;YAMADA KINJI;KARASAWA TAKESHI;MATSUSHITA KENICHIRO;OKUMURA KATSUYA |
分类号 |
C01G23/00;C01G35/00;H01L21/316;(IPC1-7):H01L21/316 |
主分类号 |
C01G23/00 |
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