SEMICONDUCTOR DEVICE HAVING GROUP III NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To improve the breakdown voltage of a semiconductor device having a group III nitride semiconductor. SOLUTION: The semiconductor device has a first layer 32 composed of AlGaN, a second layer 42 composed of GaN, a gate electrode 34, a source electrode 38, and a drain electrode 28. The first layer 32 has a region 32a formed between the gate electrode 34 and the second layer 42. A channel is formed in the vicinity of a boundary section 24 between the first layer 32 and the second layer 42. The second layer 42 is of p-type conductivity. Mg as a p-type impurity is doped. The second layer 42 is brought into contact with the source electrode 38. COPYRIGHT: (C)2004,JPO&NCIPI