| 摘要 |
Provided is a method of manufacturing a semiconductor device with an LDD structure using a decreased number of mask-patterning processes using photolithography. The method includes forming an LDD region by implanting low-concentration impurity ions into a semiconductor substrate using a gate electrode, the sidewall of which are exposed, as an ion implantation mask. Then, to form a source/drain region, high-concentration impurity ions are implanted into the semiconductor substrate using a sacrificial masking layer, which covers the top surface and sidewalls of the gate electrode and the top surface of the semiconductor substrate to a uniform thickness, as an ion implantation mask. Implantation of the high-concentration impurity ions may be performed before or after implantation of the low-concentration impurity ions. When a CMOS transistor is formed, additional masks to be used as ion implantation masks are not required for implanting high-concentration impurity ions to form source/drain regions. Thus, the number of times mask-patterning processes are performed is reduced so as to reduce costs.
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