| 摘要 |
PURPOSE: A drain pump for use in a flash memory is provided to prevent the over program problem due to the over drain voltage as well as to improve the process margin since the break down voltage margin between the drain and source of the memory cell is secured. CONSTITUTION: A drain pump for use in a flash memory includes an operational amplifier(40), a pump(10) and a regulator(20). The operational amplifier(40) generates a variable voltage in response to the number of bits to be programmed. The pump(10) pumps the voltage inputted thereto. And, the regulator(20) performs the regulation of the output voltage of the pump(10) in response to the variable voltage and outputs the regulated voltage.
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