| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface treatment device which serves as a means for removing a masking material in a region that contains a silicon component left on the surface of the masking material after etching, a cured masking layer and the like and reduces the damage (etching) to the film layers; and to provide a means for removing carbon and silicon deposits depositing on the inner wall of a vacuum vessel. SOLUTION: Fluorine gas is added as ashing gas to oxygen gas in a plasma surface treating device. A mixed gas of oxygen gas and fluorine gas is introduced as ashing gas to remove the masking material in the region that contains a silicon component left on the surface of the masking material, a cured masking layer and the like, and to remove carbon and silicon deposits remaining on the inner wall of the vacuum chamber at the same time. Furthermore, the masking material can be removed under a low pressure, and a surface treatment is carried out using only an oxygen gas plasma so as to reduce the damage (etching) to the film layers subjected to etching after the above step of using a mixed gas plasma of oxygen and fluorine is carried out. COPYRIGHT: (C)2004,JPO&NCIPI
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