| 发明名称 |
Selection of memory cells in data storage devices |
| 摘要 |
A data storage device includes a plurality of shunt elements having controlled current paths connected in series, and a plurality of memory cells having programmable resistance states. Each memory cell is connected across the controlled current path of a corresponding shunt element.
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| 申请公布号 |
US6791867(B2) |
申请公布日期 |
2004.09.14 |
| 申请号 |
US20020299542 |
申请日期 |
2002.11.18 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
TRAN LUNG T. |
| 分类号 |
G11C11/15;G11C8/02;G11C8/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):G11C11/00;G11C7/00 |
主分类号 |
G11C11/15 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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