METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE USING BUFFER LAYER HAVING VOID

摘要

PURPOSE: A method for fabricating a semiconductor substrate using a buffer layer having a void is provided to reduce a junction area between a heterojunction substrate and a chemical compound semiconductor by forming a plurality of voids on the heterojunction substrate. CONSTITUTION: A chemical compound semiconductor buffer layer(11) having a plurality of voids is formed on an upper surface of a heterojunction substrate(10) by reacting the third group elements with the fifth group elements. A chemical compound semiconductor layer(12) is grown on the chemical compound semiconductor buffer layer. The chemical compound semiconductor layer is separated from the heterojunction substrate by using a void of the chemical compound semiconductor buffer layer.