| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method that can reduce contact resistance between a silicon layer and a metal layer and leakage current by forming on the silicon layer an epitaxial C49-TiSi<SB>2</SB>layer having an interfacial energy so small that a phase change does not occur in a high-temperature heat treatment, thus preventing the TiSi<SB>2</SB>layer from being agglomerated and grouped. SOLUTION: The semiconductor device has a silicon layer 201, an insulating film 202 that is formed on the silicon layer 201 and whose contact hole is opened such that part of the silicon layer 201 is exposed, a titanium silicide layer 203 of a C49 phase formed by an epitaxial growth on the silicon layer 201 in the contact hole, and a metal layer 204 formed on the titanium silicide layer 203. COPYRIGHT: (C)2004,JPO&NCIPI |
