| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a mask pattern by which a narrow and isolated pattern can be etched without using an expensive means such as optical proximity compensation, and to provide a method for etching a magnetic reproducing head. <P>SOLUTION: A plurality of assist features 15 is added close to the narrow region 11 in the mask pattern having the main isolated pattern (narrow region 11) so as to locally increase the pattern density. The mask pattern is formed into a two-layer mask suitable for liftoff in the succeeding processes. The lower layer of the two-layer mask is exposed to a dissolving liquid to form an undercut under the upper layer. This undercutting process is terminated when the all assist features 15 are lifted off. In most cases, the lower layer part of the narrow region 11 is also removed, however, the narrow region 11 is not lifted off as far as at least one end of the narrow region 11 is kept as connected to an area of the mask main region which is too wide to be fully undercut. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
