| 摘要 |
A via hole is formed to reach a Cu interconnection through an interlayer insulating film that covers the Cu interconnection. A conductive polymeric member is buried in the via hole electrolytically. A resist pattern is formed on the interlayer insulating film by photolithography, and a trench is formed, connected to the via hole, by etching, using the resist pattern as a mask. The resist pattern and the conductive polymeric member are removed thereafter.
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