| 发明名称 |
OXIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting device that is high in electrostatic withstanding voltage and excellent in reliability. <P>SOLUTION: In this oxide semiconductor light emitting device, an n-type ZnO buffer layer 102 is formed between an n-type ZnO single-crystal substrate 101 and an n-type Mg<SB>0.1</SB>Zn<SB>0.9</SB>O clad layer 103. The carrier concentration in the ZnO buffer layer 102 is maintained within the range from 1×10<SP>18</SP>cm<SP>-3</SP>to 1×10<SP>21</SP>cm<SP>-3</SP>. Consequently, the electrical resistance between the n-type ZnO single-crystal substrate 101 and n-type Mg<SB>0.1</SB>Zn<SB>0.9</SB>O clad layer 103 is reduced, and the electrostatic withstanding voltage of this light emitting device can be improved. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
| 申请公布号 |
JP2004247681(A) |
申请公布日期 |
2004.09.02 |
| 申请号 |
JP20030038385 |
申请日期 |
2003.02.17 |
| 申请人 |
SHARP CORP;KAWASAKI MASASHI |
发明人 |
SAITO HAJIME;KAWASAKI MASASHI |
| 分类号 |
H01L33/12;H01L33/28;H01L33/40;H01S5/347 |
主分类号 |
H01L33/12 |
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