N-TYPE DIAMOND SEMICONDUCTOR AND ITS MANUFACTURING METHOD

摘要

A sulfur-doped n-type diamond semiconductor characterized in that a diamond semiconductor is grown on the (100)-face of a diamond substrate where the angle (off angle) of the normal of the diamond substrate to the normal of the <100>-direction is 1.5 degrees or less by a microwave CVD method using a sulfur source in a diamond synthesis atmosphere. Its manufacturing method and an ultraviolet light-emitting diode using the sulfur-doped n-type diamond semiconductor are also disclosed. The sulfur-doped n-type diamond semiconductor is manufactured with a good reproducibility and is useful for high-efficiency high-luminance ultraviolet light-emitting diodes.