| 摘要 |
PURPOSE: A double transistor IC for electronic ballast and a fabricating method thereof are provided to simplify a fabrication process and reduce the manufacturing cost by forming two transistors or FET dies with one package. CONSTITUTION: A lead frame includes a plurality of leads(20-27,35). A plurality of transistor chips(40,40a) includes three terminals, respectively. A molding resin(80) is used for protecting a connecting state between the transistor chips and the leads. The lead frame includes two chip loading parts(50,50a). The transistor chips are adhered on the chip loading parts. The chip loading parts include a plurality of external extension parts(70) which are extended to the outside of the molding resin.
|
