| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor growth method capable of obtaining P-type high carrier concentration by nitrogen doping to II-VI compound semiconductor thin film. SOLUTION: Organic zinc compound as addition compound wherein triallyl amine is coordinated in dialkyl zinc R1 R2 Zn (R1 and R2 are the same or different alkyl groups), and group VI compound are used. If necessary, nitrogen dopant like triallyl amine is used. Thereby the maximum P-type carrier concentration 5×10<18> cm<-3> can be obtained by nitrogen doping to II-VI compound semiconductor thin film. |
