发明名称 |
Nonvolatile memory and processing system |
摘要 |
It is an object of the present invention to allow a voltage generating section which produces a high voltage to efficiently produce a high voltage, and to reduce a layout area of a semiconductor chip. An intermediate voltage charge pump circuit is provided in a voltage producing section of a flash memory. The intermediate voltage charge pump circuit comprises switching elements, a first charge pump circuit comprising capacitors, a second charge pump circuit comprising switching elements, capacitors and an equalizer comprising switching elements. These elements are driven by driving signals. A period during which all of one contacts of parasitic capacities Capacitor are brought into floating state temporarily is formed. After corresponding parasitic capacities are short-circuited by the switching elements, nodes thereof are electrically charged or discharged, and a high voltage is produced while reusing electric charge while using electric charge discharged to a reference potential by next cycle.
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申请公布号 |
US6781890(B2) |
申请公布日期 |
2004.08.24 |
申请号 |
US20020308106 |
申请日期 |
2002.12.03 |
申请人 |
RENESAS TECHNOLOGY CORP.;HITACHI ULSI SYSTEMS, CO., LTD. |
发明人 |
TANAKA HITOSHI;ISODA MASANORI;KAWAHARA TAKAYUKI |
分类号 |
G11C16/06;G06K19/07;G11C5/14;G11C16/30;H01L21/822;H01L21/8238;H01L21/8247;H01L27/04;H01L27/092;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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