| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to minimize damage of a lower conductive layer of a complex insulating layer by adding an H-bearing gas into a C-F gas. CONSTITUTION: One selected from a group including CH3F, CHF3, and C2H2F5 is added into one selected from a group including CF4, C2F6, C3F8, and C4F8 or a mixed gas thereof in order to etch a complex insulating layer including an insulating layer of a silicon nitride layer(34) and a lower conductive layer is exposed thereby. The insulating layer of the silicon nitride layer is formed with a silicon nitride layer or a silicon oxynitride layer.
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