MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device whose manufacturing cost is reduced by omitting a step of patterning a mask insulating film for selectively adding 15 group elements. SOLUTION: This manufacturing method of a semiconductor device is provided with a step of forming a base film 112 on a substrate 111; a step of forming a crystalline silicon film 113 containing impurity metal on the base film by forming an amorphous silicon film on the base film, applying a solution containing metal on the amorphous silicon film, and performing heat treatment; a step of forming a porous region 121 on the surface of the crystalline silicon film by anodizing the crystalline silicon film; a step for gettering by segregating the impurity metal in the crystalline silicon film in the porous region; and a step of eliminating the porous region. COPYRIGHT: (C)2004,JPO&NCIPI