| 摘要 |
PROBLEM TO BE SOLVED: To provide a nano-device which shows excellent performances and is superior in productivity. SOLUTION: A source electrode 204, a drain electrode 206, and a gate electrode 208 are provided on a silicon substrate 202, and a carbon nanotube structure 131 is fixed so as to straddle over the source electrode 204 and the drain electrode 206. The carbon nanotube structure 131 is constituted by winding a polymer 119 on a surface of a carbon nanotube 105. The polymer 119 functions as a tunnel layer, and among the carbon nanotube 105, a portion positioned between the source electrode 204 and the drain electrode 206 functions as a Coulomb island. That is, electrons flow into the carbon nanotube 105 from the source electrode 204 through the polymer 119 and the electron flows out of the carbon nanotube 105 to the drain electrode 206 via the polymer 119. The number of the electron, existing in the carbon nanotube 105, is controlled according to a voltage applied to the gate electrode 208, and the size of the drain current is controlled. COPYRIGHT: (C)2004,JPO&NCIPI |
