发明名称 |
Elevated source drain disposable spacer CMOS |
摘要 |
In one embodiment of the invention, source and drain regions are formed as well as source and drain contact regions. Thereafter source and drain extension regions are formed. In another embodiment, elevated source and drain regions are formed as well as source and drain extension regions. Thereafter source and drain contact regions are formed at a temperature up to about 600° C. and an annealing time of up to about one minute.
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申请公布号 |
US6777298(B2) |
申请公布日期 |
2004.08.17 |
申请号 |
US20020172649 |
申请日期 |
2002.06.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ROY RONNEN A.;CABRAL, JR. CYRIL;LAVOIE CHRISTIAN;LEE KAM-LEUNG |
分类号 |
H01L21/265;H01L21/28;H01L21/285;H01L21/324;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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